AGD Forte Dual Mono Amplifier Gallium Nitride Power MOSFETs

The New AGD Forte

100% Dual Mono amplifier, entirely built around GaN power semiconductors, used both in its power modules and in its newly developed, ultra-low-noise GaN power supply.

Lead time is approximate 4-6 weeks from order.

Available in Silver and Black Anodised. Other finishing types are available at additional cost upon request as a custom order only.

Design Philosophy

• The AGD “FORTE” Dual Mono Amplifier represents the latest advancement in our premium Hi-End Power Amplifier lineup.
• It employs 100% Gallium Nitride Power MOSFETs in both the output power stage and power supply.
• It delivers a rating of over 400W into 4Ω loads (an 800W bridge-mode option is available only as a custom order).
• Achieving this level of performance within a compact CNC-machined chassis (available in fully polished or anodised black finishes) required the development of a new power supply featuring a PFC stage and an LLC resonant half-bridge primary stage utilising the latest high-voltage GaN MOSFETs currently available.
• Additionally, the “FORTE” incorporates a newly designed motherboard with low-noise LDO voltage rails and an exceptional analog buffer stage based on AD797 operational amplifiers, matching those found in our flagship models.
• To preserve the exceptional value of AGD amplifiers over time, the innovative GaN-based power stage module in the AGD “FORTE” can be easily upgraded to next-generation GaN power modules that utilise cutting-edge GaN MOSFET technology.
• Plus, the design is completely DUAL MONO, featuring independent power supplies for each channel, and a complete separation of the analog and power stages, ensuring top-notch performance and reliability.

The AGD FORTE amplifier utilises the same fundamental technology established with the AGD SOLO, Gran Vivace, AGD DUET, and AGD AUDION, which are the first true high-end amplifiers based on Gallium Nitride power MOSFETs.

With the AGD FORTE, we have expanded the use of the advanced power semiconductor, GaN MOSFET, to the power supply stage PFC front-end, allowing for lower noise, increased output power rating, and improved efficiency.

The NEW GaN-Power output stage, based on a new generation of 650V-rated GaN MOSFETs, operating up to 800kHz and at elevated slew-rates delivering the most sublime sound thanks to its ideal “by the book” oscillations-free switching performances.